成為會員?基本信息
猜您感興趣
供三菱RA60H4047M1 射頻功放模塊 RF模塊
信息類型:供應(yīng)
The RA60H4047M1 is a 60-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 400- to
470-MHz range.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 400-470MHz
• Metal shield structure that makes the improvements of spurious
radiation simple
• Low-Power Control Current IGG=5mA (typ) @ VGG=5V
• Module Size: 67 x 18 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
描述
該RA60H4047M1是60-watt RF的MOSFET放大器模塊12.5-volt移動電臺在向工作在400-470-MHz范圍.
電池可以直接連接到漏極增強型MOSFET晶體管.如果沒有門電壓(VGG進入=0V),只有一小漏電流
漏極和標稱輸出信號(Pout=60W)衰減到60 dB.輸出功率和漏電流增加為柵極電壓升高.輸出功率和漏電流
大幅增加,與周圍0V(最低)柵電壓.額定輸出功率變?yōu)榭捎脿顟B(tài),在VGG是4V(典型值),5V(最大).
在VGG=5V,的典型柵極電流5mA.模塊設(shè)計用于非線性調(diào)頻調(diào)制,但也可以用于線性調(diào)制通過設(shè)置靜態(tài)漏電流與
柵極電壓和控制輸入與輸出功率.
特征
•增強型MOSFET晶體管(IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>60W,ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
•寬帶頻率范圍:400-470MHz
•金屬屏蔽結(jié)構(gòu),使得虛假的改進輻射簡單
•低功耗控制電流IGG=5mA (typ) @ VGG=5V
•模塊尺寸:67 x 18 x 9.9 mm
•線性操作有可能通過設(shè)置靜態(tài)漏目前同門電壓和輸出功率控制與輸入功率.
北京京瑞馨科技--供應(yīng)全新原裝正品射頻模塊、射頻管!假一罰十。。
聯(lián)系人:何先生
聯(lián)系電話:182-1045-0337 、010-52459918 010-6492 0890
QQ:5155-2801
網(wǎng)址:www.jrx-tech.com
全新原裝正品供應(yīng):
三菱(MITSUBISHI):(HF/VHF/UHF/900MHz(分立MOSFET)
RD100HHF1、RD70HVF1、RD70HUF2、RD70HHF1、RD60HUF1、RD45HMF1、RD35HUF2、
RD30HUF1、RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、
RD09MUP2、RD07MVS1B、RD07MVS1、RD07MVS2、RD07MUS2B、RD06HVF1 RD06HHF1、
RD05MMP1、RD04HMS2、RD02MUS1、RD02MUS1B、RD02MUS2、RD02MUS2B、
RD01MUS1、RD01MUS2B、RD01MUS2、RD00HHS1、RD00HVS1等RD系列
三菱(MITSUBISHI):
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M
RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1
RA45H7687M1、RA45H4452M、RA45H4047M、RA45H4045MR、RA35H1516M、
RA33H1516M1、RA30H4552M1、RA30H4452M、RA30H4047M1、RA30H4047M、
RA30H3340M、RA30H2127M、RA30H1721M、RA30H1317M1、RA30H1317M、
RA30H0608M、RA20H8994M、RA20H8087M、RA18H1213G、RA13H8891MA、
RA13H8891MB、RA13H4452M、RA13H4047M、RA13H3340M、RA13H1317M、
RA08H1317M、RA08N1317M、RA07N4452M、RA07N4047M、RA07N3340M、
RA07M4452MSA、RA07M4452M、RA07M4047MSA、RA07M4047M、RA07M3843M、
RA07M3340M、RA07M2127M、RA07M1317MSA、RA07M1317M、RA07M0608M、
RA07H4452M、RA07
The RA60H4047M1 is a 60-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 400- to
470-MHz range.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 400-470MHz
• Metal shield structure that makes the improvements of spurious
radiation simple
• Low-Power Control Current IGG=5mA (typ) @ VGG=5V
• Module Size: 67 x 18 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
描述
該RA60H4047M1是60-watt RF的MOSFET放大器模塊12.5-volt移動電臺在向工作在400-470-MHz范圍.
電池可以直接連接到漏極增強型MOSFET晶體管.如果沒有門電壓(VGG進入=0V),只有一小漏電流
漏極和標稱輸出信號(Pout=60W)衰減到60 dB.輸出功率和漏電流增加為柵極電壓升高.輸出功率和漏電流
大幅增加,與周圍0V(最低)柵電壓.額定輸出功率變?yōu)榭捎脿顟B(tài),在VGG是4V(典型值),5V(最大).
在VGG=5V,的典型柵極電流5mA.模塊設(shè)計用于非線性調(diào)頻調(diào)制,但也可以用于線性調(diào)制通過設(shè)置靜態(tài)漏電流與
柵極電壓和控制輸入與輸出功率.
特征
•增強型MOSFET晶體管(IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>60W,ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
•寬帶頻率范圍:400-470MHz
•金屬屏蔽結(jié)構(gòu),使得虛假的改進輻射簡單
•低功耗控制電流IGG=5mA (typ) @ VGG=5V
•模塊尺寸:67 x 18 x 9.9 mm
•線性操作有可能通過設(shè)置靜態(tài)漏目前同門電壓和輸出功率控制與輸入功率.
北京京瑞馨科技--供應(yīng)全新原裝正品射頻模塊、射頻管!假一罰十。。
聯(lián)系人:何先生
聯(lián)系電話:182-1045-0337 、010-52459918 010-6492 0890
QQ:5155-2801
網(wǎng)址:www.jrx-tech.com
全新原裝正品供應(yīng):
三菱(MITSUBISHI):(HF/VHF/UHF/900MHz(分立MOSFET)
RD100HHF1、RD70HVF1、RD70HUF2、RD70HHF1、RD60HUF1、RD45HMF1、RD35HUF2、
RD30HUF1、RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、
RD09MUP2、RD07MVS1B、RD07MVS1、RD07MVS2、RD07MUS2B、RD06HVF1 RD06HHF1、
RD05MMP1、RD04HMS2、RD02MUS1、RD02MUS1B、RD02MUS2、RD02MUS2B、
RD01MUS1、RD01MUS2B、RD01MUS2、RD00HHS1、RD00HVS1等RD系列
三菱(MITSUBISHI):
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M
RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1
RA45H7687M1、RA45H4452M、RA45H4047M、RA45H4045MR、RA35H1516M、
RA33H1516M1、RA30H4552M1、RA30H4452M、RA30H4047M1、RA30H4047M、
RA30H3340M、RA30H2127M、RA30H1721M、RA30H1317M1、RA30H1317M、
RA30H0608M、RA20H8994M、RA20H8087M、RA18H1213G、RA13H8891MA、
RA13H8891MB、RA13H4452M、RA13H4047M、RA13H3340M、RA13H1317M、
RA08H1317M、RA08N1317M、RA07N4452M、RA07N4047M、RA07N3340M、
RA07M4452MSA、RA07M4452M、RA07M4047MSA、RA07M4047M、RA07M3843M、
RA07M3340M、RA07M2127M、RA07M1317MSA、RA07M1317M、RA07M0608M、
RA07H4452M、RA07
如果此信息不合適,您也可以自己 發(fā)布一條采購信息!
法律聲明:本站只提供信息交流平臺,各交易者自己審辨真假,如有損失,本站概不負責(zé)。
警方提示:網(wǎng)上買、賣商品要謹慎小心,以免上當受騙。
警方提示:網(wǎng)上買、賣商品要謹慎小心,以免上當受騙。
聯(lián)絡(luò)時請說明來自卓強IC網(wǎng)-電子元器件貿(mào)易平臺-線上IC交易網(wǎng),以獲得更好效果。
所有評論
發(fā)表評論()
最新評論